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JANS2N7372
JANS2N7372
GP BJT JANS2N7372
Microchip Technology
JANS2N7372
--
Diodes, Transistors and Thyristors
GP BJT
JANS2N7372.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width6.6
Package Height20.19(Max) - 6.48
Package Length13.72
Product CategoryBipolar Power
Supplier PackageTO-254
Standard Package NameTO
Minimum DC Current Gain40@5A@5V|70@2.5A@5V|50@50mA@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)4000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)5.5
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.45@0.25A@2.5A|2.2@0.5A@5A
Maximum Collector-Emitter Saturation Voltage (V)1.5@0.5A@5A|0.75@0.25A@2.5A
Description
Trans GP BJT PNP 80V 5A 4000mW 3-Pin(3+Tab) TO-254
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