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GP BJT JANSF2N2369A
Microchip Technology
JANSF2N2369A
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| Type | NPN |
| EU RoHS | Not Compliant |
| Material | Si |
| ECCN (US) | EAR99 |
| Packaging | Tray |
| Automotive | No |
| Part Status | Active |
| Configuration | Single |
| Product Category | Bipolar Power |
| Minimum DC Current Gain | 40@10mA@0.35V|40@10mA@1V|30@30mA@0.4V|20@100mA@1V |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 360 |
| Maximum Emitter Base Voltage (V) | 4.5 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Operating Temperature (°C) | 200 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 15 |
| Maximum Collector Cut-Off Current (nA) | 10000 |
| Maximum Base Emitter Saturation Voltage (V) | 0.85@1mA@10mA|0.9@3mA@30mA|1.2@10mA@100mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.2@1mA@10mA|0.25@3mA@30mA|0.45@10mA@100mA |
| Description |
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