Product Attribute | Attribute Value |
HTS | 8541.21.00.40 |
PPAP | No |
Type | PNP |
EU RoHS | Not Compliant |
Material | Si |
ECCN (US) | EAR99 |
Automotive | No |
Part Status | Active |
Configuration | Single |
Product Category | Bipolar Small Signal |
Minimum DC Current Gain | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V |
Supplier Temperature Grade | Military |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 500 |
Maximum DC Collector Current (A) | 0.6 |
Maximum Emitter Base Voltage (V) | 5 |
Maximum Collector Base Voltage (V) | 60 |
Maximum Operating Temperature (°C) | 200 |
Minimum Operating Temperature (°C) | -65 |
Operating Junction Temperature (°C) | -65 to 200 |
Maximum Collector-Emitter Voltage (V) | 60 |
Maximum Base Emitter Saturation Voltage (V) | 1.3@15mA@150mA|2.6@50mA@500mA |
Maximum Collector-Emitter Saturation Voltage (V) | 0.4@15mA@150mA|1.6@50mA@500mA |
Description |