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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANSR2N2222A
JANSR2N2222A
GP BJT JANSR2N2222A
Microchip Technology
JANSR2N2222A
--
Diodes, Transistors and Thyristors
GP BJT
JANSR2N2222A.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter5.84(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height5.33(Max)
Product CategoryBipolar Power
Supplier PackageTO-18
Minimum DC Current Gain50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.8
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)50
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Description
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Tray
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