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JANSR2N2222AUBT
JANSR2N2222AUBT
GP BJT JANSR2N2222AUBT
STMicroelectronics
JANSR2N2222AUBT
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.54
Package Height1.42(Max)
Package Length3.05
Product CategoryBipolar Power
Supplier PackageLCC-3UB
SVHC Exceeds ThresholdYes
Minimum DC Current Gain30@0.1A@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)730
Maximum DC Collector Current (A)0.8
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)5@50mA@500mA|1.2@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)1@50mA@500mA|0.3@15mA@150mA
Description
Trans GP BJT NPN 50V 0.8A 730mW 4-Pin LCC-3UB Tray
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