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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANSR2N3439
JANSR2N3439
GP BJT JANSR2N3439
Microchip Technology
JANSR2N3439
--
Diodes, Transistors and Thyristors
GP BJT
JANSR2N3439.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Minimum DC Current Gain10@0.2mA@10V|30@2mA@10V|40@20mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)450
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)350
Maximum Base Emitter Saturation Voltage (V)1.3@4mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@4mA@50mA
Description
Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-39 Tray
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