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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANSR2N3439UA
JANSR2N3439UA
GP BJT JANSR2N3439UA
Microchip Technology
JANSR2N3439UA
--
Diodes, Transistors and Thyristors
GP BJT
JANSR2N3439UA.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width5.72(Max)
Package Height1.9(Max)
Package Length3.93(Max)
Product CategoryBipolar Power
Supplier PackageUA
Minimum DC Current Gain40@20mA@10V|30@2mA@10V|10@0.2mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)450
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)350
Maximum Base Emitter Saturation Voltage (V)1.3@4mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@4mA@50mA
Description
Trans GP BJT NPN 350V 1A 800mW 4-Pin UA Waffle
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