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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANSR2N3501
JANSR2N3501
GP BJT JANSR2N3501
Microchip Technology
JANSR2N3501
--
Diodes, Transistors and Thyristors
GP BJT
JANSR2N3501.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
Minimum DC Current Gain35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)150
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)150
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|1.2@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.4@15mA@150mA
Description
Trans GP BJT NPN 150V 0.3A 1000mW 3-Pin TO-39 Tray
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