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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANSR2N3501UB
JANSR2N3501UB
GP BJT JANSR2N3501UB
Microchip Technology
JANSR2N3501UB
--
Diodes, Transistors and Thyristors
GP BJT
JANSR2N3501UB.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Product CategoryBipolar Power
Supplier PackageCase UB
Minimum DC Current Gain35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)150
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)150
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|1.2@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@1mA@10mA|0.4@15mA@150mA
Description
Trans GP BJT NPN 150V 0.3A 1000mW 4-Pin Case UB Waffle
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