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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANSR2N3635L
JANSR2N3635L
GP BJT JANSR2N3635L
Microchip Technology
JANSR2N3635L
--
Diodes, Transistors and Thyristors
GP BJT
JANSR2N3635L.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingStud
ECCN (US)EAR99
PackagingTray
Pin Count2
AutomotiveNo
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width17.2
Package Height11.43(Max) + 11.13
Package Length19.85
Product CategoryBipolar Power
Supplier PackageDO-5
Minimum DC Current Gain55@0.1mA@10V|90@1mA@10V|100@10mA@10V|100@50mA@10V|60@150mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)140
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)140
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|0.9@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@1mA@10mA|0.6@5mA@50mA
Description
Trans GP BJT PNP 140V 1A 1000mW 2-Pin DO-5 Tray
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