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JANSR2N5551UBT
JANSR2N5551UBT
GP BJT JANSR2N5551UBT
STMicroelectronics
JANSR2N5551UBT
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTray
Pin Count4
AutomotiveNo
Lead ShapeNo Lead
PCB changed4
Part StatusActive
ConfigurationSingle
Product CategoryBipolar Power
Supplier PackageLCC-3UB
SVHC Exceeds ThresholdYes
Minimum DC Current Gain80@1mA@5V|80@10mA@5V|30@50mA@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)580
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)160
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.15@1mA@10mA|0.2@5mA@50mA
Description
Trans GP BJT NPN 160V 0.6A 580mW 4-Pin LCC-3UB Tray
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