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JANTX2N2906AUB
JANTX2N2906AUB
GP BJT JANTX2N2906AUB
Microchip Technology
JANTX2N2906AUB
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Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.74(Max)
Package Height1.42(Max)
Package Length3.25(Max)
Product CategoryBipolar Small Signal
Supplier PackageCase UB
Minimum DC Current Gain40@0.1mA@10V|40@1mA@10V|40@10mA@10V|40@150mA@10V|40@500mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.3@15mA@150mA|2.6@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA|1.6@50mA@500mA
Description
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB Waffle
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