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JANTX2N3700UB
JANTX2N3700UB
GP BJT JANTX2N3700UB
Microchip Technology
JANTX2N3700UB
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingWaffle
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle
Package Width2.74(Max)
Package Height1.42(Max)
Package Length3.25(Max)
Product CategoryBipolar Power
Supplier PackageCase UB
Minimum DC Current Gain50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)140
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Base Emitter Saturation Voltage (V)1.1@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)0.2@15mA@150mA|0.5@50mA@500mA
Description
Trans GP BJT NPN 80V 1A 500mW 4-Pin Case UB Waffle
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