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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N1613L
JANTXV2N1613L
GP BJT JANTXV2N1613L
Microchip Technology
JANTXV2N1613L
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N1613L.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-5
Standard Package NameTO
Minimum DC Current Gain20@0.1mA@10V|35@10mA@10V|40@150mA@10V|20@500mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)30
Maximum Base Emitter Saturation Voltage (V)1.3@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)1.5@15mA@150mA
Description
Trans GP BJT NPN 30V 0.5A 800mW 3-Pin TO-5 Bag
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