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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N4854U
JANTXV2N4854U
GP BJT JANTXV2N4854U
Microchip Technology
JANTXV2N4854U
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N4854U.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN|PNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
ConfigurationDual
Product CategoryBipolar Small Signal
Supplier PackageCase U
Standard Package NameModule
Minimum DC Current Gain50@150mA@1V|35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|35@300mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip2
Maximum Power Dissipation (mW)600
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.25@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA
Description
Trans GP BJT NPN/PNP 40V 0.6A 600mW 6-Pin Case U
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