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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N5339
JANTXV2N5339
GP BJT JANTXV2N5339
Microchip Technology
JANTXV2N5339
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N5339.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
Minimum DC Current Gain60@0.5A@2V|60@2A@2V|40@5A@2V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)1000
Maximum Base Emitter Saturation Voltage (V)1.2@0.2A@2A|1.8@0.5A@5A
Maximum Collector-Emitter Saturation Voltage (V)0.7@0.2A@2A|1.2@0.5A@5A
Description
Trans GP BJT NPN 100V 5A 1000mW 3-Pin TO-39 Bag
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