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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N5416S
JANTXV2N5416S
GP BJT JANTXV2N5416S
Microchip Technology
JANTXV2N5416S
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N5416S.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height6.6(Max)
Product CategoryBipolar Power
Supplier PackageTO-39
Standard Package NameTO-205-AF
Minimum DC Current Gain30@50mA@10V|15@1mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)750
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)350
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)300
Maximum Collector Cut-Off Current (nA)500000
Maximum Collector-Emitter Saturation Voltage (V)2@5mA@50mA
Description
Trans GP BJT PNP 300V 1A 750mW 3-Pin TO-39 Bag
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