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JANTXV2N5416U4
JANTXV2N5416U4
GP BJT JANTXV2N5416U4
Microchip Technology
JANTXV2N5416U4
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypePNP
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width5.72(Max)
Package Height1.91(Max)
Package Length3.94(Max)
Product CategoryBipolar Power
Supplier PackageCase U4
Minimum DC Current Gain15@1mA@10V|30@50mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)350
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)300
Maximum Collector-Emitter Saturation Voltage (V)2@5mA@50mA
Description
Trans GP BJT PNP 300V 1A 1000mW 3-Pin Case U4 Tray
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