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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N5660U3
JANTXV2N5660U3
GP BJT JANTXV2N5660U3
Microchip Technology
JANTXV2N5660U3
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N5660U3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width10.16
Package Length7.52
Product CategoryBipolar Power
Supplier PackageSMD-0.5
Standard Package NameSMD
Minimum DC Current Gain40@50mA@2V|40@0.5A@5V|15@1A@5V|5@2A@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)250
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)200
Maximum Base Emitter Saturation Voltage (V)1.2@0.1A@1A|1.5@0.4A@2A
Maximum Collector-Emitter Saturation Voltage (V)0.4@0.1A@1A|0.8@0.4A@2A
Description
Trans GP BJT NPN 200V 2A 3-Pin SMD-0.5
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