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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N5794
JANTXV2N5794
GP BJT JANTXV2N5794
Microchip Technology
JANTXV2N5794
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N5794.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
ConfigurationDual
Package Height4.7(Max)
Product CategoryBipolar Power
Supplier PackageTO-78
Standard Package NameTO
Minimum DC Current Gain35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|40@300mA@10V|50@150mA@1V
Supplier Temperature GradeMilitary
Number of Elements per Chip2
Maximum Power Dissipation (mW)600
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|1.8@30mA@300mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|0.9@30mA@300mA
Description
Trans GP BJT NPN 40V 0.6A 600mW 6-Pin TO-78 Bag
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