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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N5796
JANTXV2N5796
GP BJT JANTXV2N5796
Microchip Technology
JANTXV2N5796
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N5796.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSNot Compliant
Diameter9.4(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
ConfigurationDual
Package Height4.7(Max)
Product CategoryBipolar Power
Supplier PackageTO-78
Standard Package NameTO
Minimum DC Current Gain75@100uA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@300mA@10V|50@150mA@1V
Supplier Temperature GradeMilitary
Number of Elements per Chip2
Maximum Power Dissipation (mW)600
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.3@15mA@150mA|2.6@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.4@15mA@150mA|1.6@50mA@500mA
Description
Trans GP BJT PNP 60V 0.6A 600mW 6-Pin TO-78 Bag
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