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JANTXV2N6678T1
JANTXV2N6678T1
GP BJT JANTXV2N6678T1
Microchip Technology
JANTXV2N6678T1
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Part StatusActive
Minimum DC Current Gain8
Supplier Temperature GradeMilitary
Maximum DC Collector Current (A)15
Maximum Operating Temperature (°C)200
Maximum Collector-Emitter Voltage (V)400
Description
Trans GP BJT NPN 400V 15A
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