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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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JANTXV2N6989
JANTXV2N6989
GP BJT JANTXV2N6989
Microchip Technology
JANTXV2N6989
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N6989.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count14
AutomotiveNo
PCB changed14
Part StatusActive
ConfigurationQuad
Product CategoryBipolar Power
Supplier PackageTO-116
Standard Package NameTO
Minimum DC Current Gain50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip4
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)0.8
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Description
Trans GP BJT NPN 50V 0.8A 1500mW 14-Pin TO-116 Tube
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