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JANTXV2N6989U
JANTXV2N6989U
GP BJT JANTXV2N6989U
Microchip Technology
JANTXV2N6989U
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingBag
Pin Count20
AutomotiveNo
Lead ShapeNo Lead
PCB changed20
Part StatusActive
ConfigurationQuad
Product CategoryBipolar Power
Supplier PackageLLCC
Standard Package NameLLCC
Minimum DC Current Gain50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V
Supplier Temperature GradeMilitary
Number of Elements per Chip4
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.8
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)75
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@15mA@150mA|2@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@15mA@150mA|1@50mA@500mA
Description
Trans GP BJT NPN 50V 0.8A 1000mW 20-Pin LLCC Bag
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