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JANTXV2N930
JANTXV2N930
GP BJT JANTXV2N930
Microchip Technology
JANTXV2N930
--
Diodes, Transistors and Thyristors
GP BJT
JANTXV2N930.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
TypeNPN
EU RoHSNot Compliant
Diameter5.84(Max)
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Height5.33(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-18
Standard Package NameTO-206-AA
Minimum DC Current Gain150@0.5mA@5V|100@500uA@5V
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.03
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)45
Maximum Base Emitter Saturation Voltage (V)1@0.5mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)1@0.5mA@10mA
Description
Trans GP BJT NPN 45V 0.03A 300mW 3-Pin TO-18 Bag
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