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KSA1156YSTSTU
KSA1156YSTSTU
GP BJT KSA1156YSTSTU
onsemi
KSA1156YSTSTU
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Standard Package NameTO-225-AA
Minimum DC Current Gain100@100mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)400
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)1.2@10mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)1@10mA@100mA
Description
Trans GP BJT PNP 400V 0.5A 1000mW 3-Pin(3+Tab) TO-126 Tube
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