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KSB1116SYTA
KSB1116SYTA
GP BJT KSB1116SYTA
onsemi
KSB1116SYTA
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Diodes, Transistors and Thyristors
GP BJT
KSB1116SYTA.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingAmmo
Pin Count3
AutomotiveNo
Lead ShapeFormed
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain135@100mA@2V|81@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)750
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)120(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)50
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@1A
Description
Trans GP BJT PNP 50V 1A 3-Pin TO-92 Ammo
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