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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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KSB1151YSTSSTU
KSB1151YSTSSTU
GP BJT KSB1151YSTSSTU
onsemi
KSB1151YSTSSTU
--
Diodes, Transistors and Thyristors
GP BJT
KSB1151YSTSSTU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Minimum DC Current Gain160@2A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1300
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.2@0.2A@2A
Maximum Collector-Emitter Saturation Voltage (V)0.3@0.2A@2A
Description
Trans GP BJT PNP 60V 5A 1300mW 3-Pin(3+Tab) TO-126 Rail
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