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KSB798GTF
KSB798GTF
GP BJT KSB798GTF
onsemi
KSB798GTF
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Diodes, Transistors and Thyristors
GP BJT
KSB798GTF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeFlat
PCB changed3
Part StatusObsolete
ConfigurationSingle Dual Collector
Package Width2.7(Max)
Package Height1.7(Max)
Package Length4.7(Max)
Product CategoryBipolar Power
Supplier PackageSOT-89
Standard Package NameSOT-89
Minimum DC Current Gain200@100mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)110(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)25
Maximum Base Emitter Saturation Voltage (V)1.2@0.1A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.4@0.1A@1A
Description
Trans GP BJT PNP 25V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R
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