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KSC2688OS
KSC2688OS
GP BJT KSC2688OS
onsemi
KSC2688OS
--
Diodes, Transistors and Thyristors
GP BJT
KSC2688OS.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Minimum DC Current Gain60@10mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)300
Maximum Transition Frequency (MHz)80(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)300
Maximum Collector-Emitter Saturation Voltage (V)1.5@5mA@50mA
Description
Trans GP BJT NPN 300V 0.2A 1250mW 3-Pin(3+Tab) TO-126 Bulk
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