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KSC3503DS
KSC3503DS
GP BJT KSC3503DS
onsemi
KSC3503DS
--
Diodes, Transistors and Thyristors
GP BJT
KSC3503DS.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Standard Package NameTO-225-AA
Minimum DC Current Gain60@10mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)7000
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)300
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)300
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@2mA@20mA
Maximum Collector-Emitter Saturation Voltage (V)0.6@2mA@20mA
Description
Trans GP BJT NPN 300V 0.1A 7000mW 3-Pin(3+Tab) TO-126 Bag
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