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KSC3552OTU
KSC3552OTU
GP BJT KSC3552OTU
onsemi
KSC3552OTU
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Diodes, Transistors and Thyristors
GP BJT
KSC3552OTU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryBipolar Power
Supplier PackageTO-3PN
Standard Package NameTO-3P
Minimum DC Current Gain20@0.8A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Maximum DC Collector Current (A)12
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)1100
Maximum Transition Frequency (MHz)15(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)800
Maximum Base Emitter Saturation Voltage (V)1.5@1.2A@6A
Maximum Collector-Emitter Saturation Voltage (V)2@1.2A@6A
Description
Trans GP BJT NPN 800V 12A 150000mW 3-Pin(3+Tab) TO-3PN Rail
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