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KSD1273P
KSD1273P
GP BJT KSD1273P
onsemi
KSD1273P
--
Diodes, Transistors and Thyristors
GP BJT
KSD1273P.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.7
Package Height15.87
Package Length10.16
Product CategoryBipolar Power
Supplier PackageTO-220F
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Minimum DC Current Gain800@500mA@4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)30(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector-Emitter Saturation Voltage (V)1@0.05A@2A
Description
Trans GP BJT NPN 60V 3A 2000mW 3-Pin(3+Tab) TO-220F Bulk
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