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KSD1616AYTA
KSD1616AYTA
GP BJT KSD1616AYTA
onsemi
KSD1616AYTA
--
Diodes, Transistors and Thyristors
GP BJT
KSD1616AYTA.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingFan-Fold
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain135@100mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)750
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)160(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Base Emitter Saturation Voltage (V)1.2@50mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@1A
Description
Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold
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