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KSD882YSTSSTU
KSD882YSTSSTU
GP BJT KSD882YSTSSTU
onsemi
KSD882YSTSSTU
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Minimum DC Current Gain160@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)90(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Base Emitter Saturation Voltage (V)2@0.2A@2A
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.2A@2A
Description
Trans GP BJT NPN 30V 3A 1000mW 3-Pin(3+Tab) TO-126 Rail
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