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KSE170S
KSE170S
GP BJT KSE170S
onsemi
KSE170S
--
Diodes, Transistors and Thyristors
GP BJT
KSE170S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.45(Max)
Package Height11.2(Max)
Package Length8.3(Max)
Product CategoryBipolar Power
Supplier PackageTO-126
Minimum DC Current Gain12@1.5A@1V|30@500mA@1V|50@100mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)2@600mA@3A|1.5@150mA@1.5A
Maximum Collector-Emitter Saturation Voltage (V)1.7@600mA@3A|0.9@150mA@1.5A|0.3@50mA@500mA
Description
Trans GP BJT PNP 40V 3A 1500mW 3-Pin(3+Tab) TO-126 Bulk
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