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KSH29CTF
KSH29CTF
GP BJT KSH29CTF
onsemi
KSH29CTF
--
Diodes, Transistors and Thyristors
GP BJT
KSH29CTF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain40@200mA@4V|15@1A@4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1560
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)3(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)100
Maximum Collector-Emitter Saturation Voltage (V)0.7@125mA@1A
Description
Trans GP BJT NPN 100V 1A 1560mW 3-Pin(2+Tab) DPAK T/R
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