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KSH45H11ITU
KSH45H11ITU
GP BJT KSH45H11ITU
onsemi
KSH45H11ITU
--
Diodes, Transistors and Thyristors
GP BJT
KSH45H11ITU.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.3
Package Height6.1
Package Length6.6
Product CategoryBipolar Power
Supplier PackageIPAK
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Minimum DC Current Gain60@2A@1V|40@4A@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1750
Maximum DC Collector Current (A)8
Maximum Emitter Base Voltage (V)5
Maximum Transition Frequency (MHz)40(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)1@0.4A@8A
Description
Trans GP BJT PNP 80V 8A 1750mW 3-Pin(3+Tab) IPAK Tube
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