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MAT030000C
MAT030000C
GP BJT MAT030000C
ADI
MAT030000C
--
Diodes, Transistors and Thyristors
GP BJT
MAT030000C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
ECCN (US)EAR99
PackagingTray
AutomotiveNo
Part StatusActive
ConfigurationDual
Product CategoryBipolar Small Signal
Minimum DC Current Gain100@1mA|70@1mA|90@100uA|60@100uA|80@10uA|50@10uA
Number of Elements per Chip2
Maximum Power Dissipation (mW)500
Maximum DC Collector Current (A)0.02
Maximum Collector Base Voltage (V)36
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)36
Maximum Collector Cut-Off Current (nA)0.2
Maximum Collector-Emitter Saturation Voltage (V)0.1@100uA@1mA
Description
Trans GP BJT PNP 36V 0.02A 500mW Tray
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