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MBT6429DW1T1G
MBT6429DW1T1G
GP BJT MBT6429DW1T1G
onsemi
MBT6429DW1T1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
ConfigurationDual
Package Width1.25
Package Height0.9
Package Length2
Product CategoryBipolar Small Signal
Supplier PackageSC-88
Standard Package NameSC
Minimum DC Current Gain500@1mA@5V|500@10mA@5V|500@0.01mA@5V|500@0.1mA@5V
Number of Elements per Chip2
Maximum Power Dissipation (mW)150
Maximum DC Collector Current (A)0.2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)55
Maximum Transition Frequency (MHz)700
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)45
Maximum Collector-Emitter Saturation Voltage (V)0.2@0.5mA@10mA|0.6@5mA@100mA
Description
Trans GP BJT NPN 45V 0.2A 150mW 6-Pin SC-88 T/R
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