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MJ15001G
MJ15001G
GP BJT MJ15001G
onsemi
MJ15001G
--
Diodes, Transistors and Thyristors
GP BJT
MJ15001G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain25@4A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Maximum DC Collector Current (A)15
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)140
Maximum Transition Frequency (MHz)2(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)140
Maximum Collector-Emitter Saturation Voltage (V)1@0.4A@4A
Description
Trans GP BJT NPN 140V 15A 200000mW 3-Pin(2+Tab) TO-3 Tray
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