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MJ21196G
MJ21196G
GP BJT MJ21196G
onsemi
MJ21196G
--
Diodes, Transistors and Thyristors
GP BJT
MJ21196G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain25@8A@5V|8@16A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Maximum DC Collector Current (A)16
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)400
Maximum Transition Frequency (MHz)4(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)250
Maximum Collector-Emitter Saturation Voltage (V)1.4@0.8A@8A|4@3.2A@16A
Description
Trans GP BJT NPN 250V 16A 250000mW 3-Pin(2+Tab) TO-3 Tray
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