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MJ423
MJ423
GP BJT MJ423
onsemi
MJ423
--
Diodes, Transistors and Thyristors
GP BJT
MJ423.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
Minimum DC Current Gain30@1A@5V|10@2.5A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Maximum DC Collector Current (A)10
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)400
Maximum Transition Frequency (MHz)2.5(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)1.25@0.1A@1A
Maximum Collector-Emitter Saturation Voltage (V)0.8@0.1A@1A
Description
Trans GP BJT NPN 400V 10A 125000mW 3-Pin(2+Tab) TO-3
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