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MJ802G
MJ802G
GP BJT MJ802G
onsemi
MJ802G
--
Diodes, Transistors and Thyristors
GP BJT
MJ802G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTray
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width26.67(Max)
Package Height8.51(Max)
Package Length39.37
Product CategoryBipolar Power
Supplier PackageTO-3
Standard Package NameTO-204-AA
SVHC Exceeds ThresholdYes
Minimum DC Current Gain25@7.5A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)200000
Maximum DC Collector Current (A)30
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)2(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)90
Maximum Collector Cut-Off Current (nA)1000000
Maximum Base Emitter Saturation Voltage (V)1.3@0.75A@7.5A
Maximum Collector-Emitter Saturation Voltage (V)0.8@0.75A@7.5A
Description
Trans GP BJT NPN 90V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray
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