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MJD148-QJ
MJD148-QJ
GP BJT MJD148-QJ
Nexperia
MJD148-QJ
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Diodes, Transistors and Thyristors
GP BJT
MJD148-QJ.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
TypeNPN
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Minimum DC Current Gain40@10mA@5V|85@0.5A@1V|50@2A@1V|30@3A@1V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1600
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)15
Maximum Collector-Emitter Voltage (V)45
Maximum Collector-Emitter Saturation Voltage (V)0.5@0.2A@2A
Description
Trans GP BJT NPN 45V 4A 1600mW 3-Pin(2+Tab) DPAK T/R
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