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MJD210T4G
MJD210T4G
GP BJT MJD210T4G
onsemi
MJD210T4G
--
Diodes, Transistors and Thyristors
GP BJT
MJD210T4G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain45@2A@1V|10@5A@2V|70@500mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1400
Maximum DC Collector Current (A)5
Maximum Emitter Base Voltage (V)8
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)65(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)25
Maximum Base Emitter Saturation Voltage (V)2.5@1A@5A
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@500mA|0.75@200mA@2A|1.8@1A@5A
Description
Trans GP BJT PNP 25V 5A 1400mW 3-Pin(2+Tab) DPAK T/R
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