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MJD243T4
MJD243T4
GP BJT MJD243T4
onsemi
MJD243T4
--
Diodes, Transistors and Thyristors
GP BJT
MJD243T4.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain15@1A@1V|40@200mA@1V
Maximum Base Current (A)1
Number of Elements per Chip1
Maximum Power Dissipation (mW)1400
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.8@200mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@500mA|0.6@100mA@1A
Description
Trans GP BJT NPN 100V 4A 1400mW 3-Pin(2+Tab) DPAK T/R
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