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MJD3055TF
MJD3055TF
GP BJT MJD3055TF
onsemi
MJD3055TF
--
Diodes, Transistors and Thyristors
GP BJT
MJD3055TF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Minimum DC Current Gain5@10A@4V|20@4A@4V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1750
Maximum DC Collector Current (A)10
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)70
Maximum Transition Frequency (MHz)2(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)2000000
Maximum Collector-Emitter Saturation Voltage (V)1.1@0.4A@4A|8@3.3A@10A
Description
Trans GP BJT NPN 60V 10A 1750mW 3-Pin(2+Tab) DPAK T/R
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