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MJD31C1G
MJD31C1G
GP BJT MJD31C1G
onsemi
MJD31C1G
--
Diodes, Transistors and Thyristors
GP BJT
MJD31C1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2.38(Max)
Package Height6.35(Max)
Package Length6.73(Max)
Product CategoryBipolar Power
Supplier PackageIPAK
Standard Package NameTO-251
SVHC Exceeds ThresholdYes
Minimum DC Current Gain25@1A@4V|10@3A@4V
Maximum Base Current (A)1
Number of Elements per Chip1
Maximum Power Dissipation (mW)1560
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)3(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 150
Maximum Collector-Emitter Voltage (V)100
Maximum Collector-Emitter Saturation Voltage (V)1.2@375mA@3A
Description
Trans GP BJT NPN 100V 3A 1560mW 3-Pin(3+Tab) IPAK Tube
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