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MJD31CEITU
MJD31CEITU
GP BJT MJD31CEITU
onsemi
MJD31CEITU
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Diodes, Transistors and Thyristors
GP BJT
MJD31CEITU.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
AutomotiveNo
Part StatusObsolete
SVHC Exceeds ThresholdYes
Maximum Power Dissipation (mW)1560
Description
NPN GP EPITAXIAL PLANAR SILICON TRANSISTOR
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